Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 25/35/55ns (max.)Low-power operation IDT70V07SActive: 300mW (typ.)Standby: 3.3mW (typ.)IDT70V07LActive: 300mW (typ.)Standby: 660 mW (typ.) IDT70V07 easily expands data ...
40876: Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 25/35/55ns (max.)Low-power operation IDT70V07SActive: 300mW (typ.)St...
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Symbol |
Rating |
Commercial
& Industrial |
Unit |
VTERM |
Terminal Voltage with respect to GND |
-0.5 to +7.0 |
V |
VTER(2) |
Terminal Voltage |
-55 to +125 |
°C |
TSTG |
Temperature Under Bias |
-65 to +150
|
°C |
IOUT |
DC Output Current |
50
|
mA |
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.
The IDT70V07 is a high-speed 32K x 8 Dual-Port Static RAM. The IDT70V07 is designed to be used as a stand-alone 256K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bitor- more word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider memory system applications results in full-speed, error-free operation without the need for additional