3LN03M

Features: • Low ON-resistance.• High-speed switching.• 2.5V drive.• High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].PinoutSpecifications Absolute maximum ratings VDSS [V] 30 VGSS [V] 10 ID [A] 0.35 PD [W...

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3LN03M Picture
SeekIC No. : 004230018 Detail

3LN03M: Features: • Low ON-resistance.• High-speed switching.• 2.5V drive.• High ESD Voltage (TYP 300V)[Built-in one side diode for protection between Gate-to-Source].PinoutSpecifica...

floor Price/Ceiling Price

Part Number:
3LN03M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Low ON-resistance.
• High-speed switching.
• 2.5V drive.
• High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 30
VGSS [V] 10
ID [A] 0.35
PD [W] 0.15
Electrical characteristics
RDS(on) typ []
VGS=4V
ID [A]=0.18
0.7
RDS(on) typ []
VGS=2.5V
ID [A]=0.09
0.8
RDS(on) typ []
VGS=1.5V
1.6
VGS(off) min [V] 0.4
VGS(off) max [V] 1.3
|yfs| typ [S] 0.6
Ciss typ [pF] 30
Qg typ [nC] 1
f [kHz] 5500


Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage (*1) VGSS 10 V
Drain Current (DC) ID 0.35 A
Drain Current (Pulse) IDP PW10s, duty cycle1% 1.4 A
Allowable Power Dissipation PD 0.15 A
Channel Temperature Tch 150 A
Storage Temperature Tstg -55 to +150 W
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.




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