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3LN01C-TB-H

MOSFET N-CH 30V 150MA 3CP

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SeekIC No. : 003430595 Detail

3LN01C-TB-H: MOSFET N-CH 30V 150MA 3CP

3LN01C-TB-H Data Sheet

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US $ .05~.05 / Piece | Get Latest Price
Part Number:
3LN01C-TB-H
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~9000
  • Unit Price
  • $.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 150mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 1.58nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7pF @ 10V
Power - Max: 250mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 250mW
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 150mA
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Gate Charge (Qg) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) @ Vds: 7pF @ 10V
Supplier Device Package: 3-CP


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