3LN01N

3LN01N is a kind of N-Channel silicon mosfet.Now we give you some information about the features.The ON-resistance is low.  3LN01N has ultrahigh-speed switching.It has 2.5V drive.
You have to get some detail information about the maximum ratings of the 3LN01N if you want to purchase the product.There are seven maximum ratings at Ta=25.The V_DSS (Drain-to-Source Voltage) is 30 V.The V_GSS (Gate-to-Source Voltage) is ±10 V.The I_D (Drain Current(DC)) of the 3LN01N is 0.15 A.The I_DP (Drain Current (Pulse)) is 0.6 A under the condition of PW10s, duty cycle1%. The P_D (Allowable Power Dissipation) of the 3LN01N is 0.4 W.The T_ch (Channel Temperature) is 150 .The T_stg (Storage Temperature) ranges from -55 to +150 .
The following is about the electrical characteristics of the 3LN01N at Ta=25.The minimum V_(BR)DSS (Drain-to-Source Breakdown Voltage) is 30 V under the condition of I_D=1mA, V_GS=0.The maximum I_DSS (Zero-Gate Voltage Drain Current) of the 3LN01N is 10 s under the condition of V_DS=30V, V_GS=0.The maximum I_GSS (Gate-to-Sourse Leakage Current) is ±10 mA under the condition of V_GS=±8V, V_DS=0.The minimum V_GS(off) (Cutoff Voltage) of the 3LN01N is 0.4 V and the maximum is 1.3 V under the condition of V_DS=10V, I_D=100A.The typical C_iss (Input Capacitance) is 7.0 pF under the condition of V_DS=10V, f=1MHz. The typical C_oss (Output Capacitance) is 5.9 pF under the condition of V_DS=10V, f=1MHz.
The typical C_rss (Reverse Transfer Capacitance) of the 3LN01N is 2.3 pF under the condition of V_DS=10V, f=1MHz.The typical Q_g
(Total Gate Charge) of the 3LN01N is 1.58 nC under the condition of V_DS=10V, V_GS=10V, I_D=150mA.The typical Q_gs (Gate-to-Source Charge) is 0.26 nC under the condition of V_DS=10V, V_GS=10V, I_D=150mA.The typical Q_gd (Gate-to-Drain "Miller" Charge) is 0.31 nC under the condition of V_DS=10V, V_GS=10V, I_D=150mA.The typical V_SD (Diode Forward Voltage) of the 3LN01N is 0.87 V and the maximum is 1.2 V under the condition of I_S=150mA, V_GS=0V.