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2SK882

Application• Low reverse transfer capacitance: Crss = 0.025 pF (typ.)• Low noise figure: NF = 1.7dB (typ.)• High power gain: Gps = 28dB (typ.)• Recommend operation voltage: 5~15 VSpecifications Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V ...

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2SK882: Application• Low reverse transfer capacitance: Crss = 0.025 pF (typ.)• Low noise figure: NF = 1.7dB (typ.)• High power gain: Gps = 28dB (typ.)• Recommend operation voltage: 5...

2SK882 Data Sheet

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Part Number:
2SK882
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/11/21

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Product Details

Description



Application

• Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
• Low noise figure: NF = 1.7dB (typ.)
• High power gain: Gps = 28dB (typ.)
• Recommend operation voltage: 5~15 V


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDS 20 V
Gate-source voltage VGS ±5 V
Drain current ID 30 mA
Drain power dissipation PD 100 mW
Channel temperature Tch 125
Storage temperature Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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