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2SK880

Application• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0• High breakdown voltage: VGDS = −50 V• Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k• High input impedance: IGSS = −1 nA (max) at VGS = −30 V• Small p...

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SeekIC No. : 004227118 Detail

2SK880: Application• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0• High breakdown voltage: VGDS = −50 V• Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz...

2SK880 Data Sheet

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Part Number:
2SK880
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
• Small package


Specifications

Characteristics Symbol Rating Unit
Gate-drain voltage VGDS -50 V
Gate current IG 10 mA
Drain power dissipation PD 100 mW
Junction temperature Tj 125
Storage temperature range Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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