2SK881 Selling Leads, Price trend, 2SK881 DataSheet download, circuit diagram from SeekIC.com

Application• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)• High forward transfer admittance: |Yfs| = 9 mS (typ.)Specifications Characteristics Symbol Rating Unit Gate-drain voltage VGDO -18 V Gate current IG 10 mA Drain power dissipation PD 100 mW Junc...

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SeekIC No. : 004227121 Detail

2SK881: Application• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)• High forward transfer admittance: |Yfs| = 9 mS (typ.)Specifications Characteristics Symbol Rating Unit Gate-dra...

2SK881 Data Sheet

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Part Number:: 2SK881
Supply Ability:: 5000

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Upload time: 2025/3/13

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2SK879 evaluate
Application• High breakdown voltage: VGDS = −50 V• High input impedance: IGSS = ...
2SK880 evaluate
Application• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0• High breakdown v...
2SK880-BL(TE85L,F) evaluate
US $.15 - .26 / Piece

JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA

Product Details

Description

Application

• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
• High forward transfer admittance: |Y_fs| = 9 mS (typ.)

Specifications

Characteristics	Symbol	Rating	Unit
Gate-drain voltage	V_GDO	-18	V
Gate current	I_G	10	mA
Drain power dissipation	P_D	100	mW
Junction temperature	T_j	125
Storage temperature range	T_stg	−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SK881

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