Features: SpecificationsDescription 2SK788 is a kind of TOSHIBA semiconductor with four unique features which is as follows : The first one is low drain-source on resistance which is 0.38 (typ.). The second one is high forward trafer admittance which is 8.0 s (typ.). The third one is low lekage c...
2SK788: Features: SpecificationsDescription 2SK788 is a kind of TOSHIBA semiconductor with four unique features which is as follows : The first one is low drain-source on resistance which is 0.38 (typ.). T...
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2SK788 is a kind of TOSHIBA semiconductor with four unique features which is as follows : The first one is low drain-source on resistance which is 0.38 (typ.). The second one is high forward trafer admittance which is 8.0 s (typ.). The third one is low lekage current . The forth one is enchancement-mode.
There are some maximum ratinga which is at 25 about 2SK788. Drain-source voltage(VDSX) is 500 V . Drain-gate voltage (VDGR) is 500 V when RGS is 20 k. Gate-source voltage (VGSS) is ±20V. Drain current of DC (ID) is 13 A. Drain current of pulse(IDP) is 52 A. Drain power dissipation (PD) is 150 W when Tc is 25. Channel temperature (Tch) is 150. Storage temperature range (Tstg) is -55 to 150 . Besides, there are also some thermal characteristics about it. Thermal resistance(Junction to case)(Rth(j-c)) is 0.83 /W max. Thermal resistance(Junction to ambient)(Rth(j-a)) is 50/W max. Maximum lead temperature(1.6 mm from case for 10 seconds) (TL) is 300 max. At last, there are some electrical characteristics about it when Ta is 25. Gate leakage current(IGSS) is ±100 nA when VGS is ±20 V and VDS is 0 V. Drain cut-off current(IDSS) is 300A max.when VDS is 500 V and VGS is 0 V . Drain-source break-down voltage(V(BR)DSS) is 500 V min when ID is 10 mA and VGS is 0 V . Gate threshold voltage(Vth) is 2.0 V min and 4.0 V max when VDS is 10 V and ID is 7 A. Input capacitance(Ciss) is 2300 pF typ and 3600 pF max when VDS is 10 V , VGS is o V and f is 1 MHz. Reserve transfer capacitance (Crss) is 570 pF typ and 680 pF max when VDS is 10 V , VGS is o V and f is 1 MHz. Output capacitance (Coss) is 1000 pF typ and 1400 pF max when VDS is 10 V , VGS is o V and f is 1 MHz.
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