2SK709

The 2SK709 is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for high frequency amplifier applications, AM high frequency frequency amplifier applications and audio frequency amplifier applications. There are some features of 2SK709 as follows: (1)high |Yfs|: |Yfs|=25 mS (typ); (2)low Ciss: Ciss=7.5 pF (typ); (3)low noise.

What comes next is the absolute maximum ratings of 2SK709 (Ta=25): (1)gate-drain voltage, VGDS: -20 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 300 mW; (4)junction temperature, Tj: 125; (5)storage temperature, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK709 (Ta=25): (1)gate leakage current, IGSS: -1.0 mA at VGS=-15 V, VDS=0 V; (2)gate-drain breakdown voltage, V(BR)GDS: -20 V min at VDS=0, IG=-100A; (3)drain current, IDSS: 6 mA min and 32 mA max at VDS=5 V, VGS=0; (4)gate-source cut-off voltage, VGS(OFF): 2.5 V max at VDS=5 V, ID=1A; (5)forward transfer admittance, |Yfs|: 15 mS min and 25 mS typ at VDS=5 V, VGS=0, f=1 kHz; (6)input capacitance, Ciss: 7.5 pF typ and 10 pF max at VDS=5 V, VGS=0, f=1 MHz ; (7)reverse transfer capacitance, Crss: 2 pF typ and 3 pF max at VDG=5 V, ID=0, f=1 MHz; (8)noise figure, NF: 0.5 dB typ and 3 dB max at VDS=5 V, ID=1 mA, Rg=1 k, f=1 kHz.