PinoutSpecifications Absolute maximum ratings VDSS VDS [V] 20 VGSS VGS [V] ±5 ID [mA] 30 PD [mW] 200 Electrical characteristics IDSS min [mA] 1.2 IDSS max [mA] 12 VDS [V] 10 |yfs| typ [mS] 11 VDS [V] 10 f [kHz] 1 Ciss typ [pF] ...
2SK543: PinoutSpecifications Absolute maximum ratings VDSS VDS [V] 20 VGSS VGS [V] ±5 ID [mA] 30 PD [mW] 200 Electrical characteristics IDSS min [mA] 1.2 I...
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Absolute maximum ratings | |
---|---|
VDSS VDS [V] | 20 |
VGSS VGS [V] | ±5 |
ID [mA] | 30 |
PD [mW] | 200 |
Electrical characteristics | |
---|---|
IDSS min [mA] | 1.2 |
IDSS max [mA] | 12 |
VDS [V] | 10 |
|yfs| typ [mS] | 11 |
VDS [V] | 10 |
f [kHz] | 1 |
Ciss typ [pF] | 2.4 |
VDS [V] | 10 |
f [MHz] | 1 |
Crss typ [pF] | 0.035 |
VDS [V] | 10 |
f [MHz] | 1 |
NF typ [dB] | 1.8 |
VDS [V] | 10 |
ID [mA] | - |
f [MHz] | 100 |
The 2SK543 is a kind of N-Channel MOS silicon FET. It is designed for FM tuner, VHF-band amp applications. There are some features as follows: (1)low noise: NF=1.8 dB typ (f=100 MHz); (2)high power gain: PG=27 dB typ (f=100 MHz); (3)small reverse transfer capacitance: Crss=0.035 pF (VDS=10 V, f=1 MHz).
The following is the absolute maximum ratings of 2SK543 at Ta=25: (1)drain to source voltage, VDS: 25 V; (2)gate to source voltage, VGS: ±5 V; (3)drain current, ID: 3 mA; (4)allowable power dissipation, PD: 200 mW; (5)channel temperature, Tch: 125; (6)storage temperature, Tstg: -55 to +125.
The last one is the electrical characteristics of 2SK543 at Ta=25: (1)drain to source voltage at VGS=-4 V, ID=100A, VDSX: 20 V min; (2)common source gate cutoff current at VDS=0 V, VGS=±5 V, IGSS: 10 nA max; (3)drain current at VDS=10 V, VGS=0 V, IDSS: 1.2 mA min and 12 mA max; (4)gate to source cutoff voltage at VDS=10 V, ID=100A, VGS(off): -2.5 V max; (5)input capacitance at VDS=10 V, VGS=0 V, f=1 MHz, Ciss: 2.4 pF typ ; (6)reverse transfer capacitance at VDS=10 V, VGS=0 V, f=1 MHz, Crss: 0.035 pF typ.