2SK543

PinoutSpecifications Absolute maximum ratings VDSS VDS [V] 20 VGSS VGS [V] ±5 ID [mA] 30 PD [mW] 200 Electrical characteristics IDSS min [mA] 1.2 IDSS max [mA] 12 VDS [V] 10 |yfs| typ [mS] 11 VDS [V] 10 f [kHz] 1 Ciss typ [pF] ...

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2SK543 Picture
SeekIC No. : 004227082 Detail

2SK543: PinoutSpecifications Absolute maximum ratings VDSS VDS [V] 20 VGSS VGS [V] ±5 ID [mA] 30 PD [mW] 200 Electrical characteristics IDSS min [mA] 1.2 I...

floor Price/Ceiling Price

Part Number:
2SK543
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Pinout






Specifications

Absolute maximum ratings
VDSS VDS [V] 20
VGSS VGS [V] ±5
ID [mA] 30
PD [mW] 200
Electrical characteristics
IDSS min [mA] 1.2
IDSS max [mA] 12
VDS [V] 10
|yfs| typ [mS] 11
VDS [V] 10
f [kHz] 1
Ciss typ [pF] 2.4
VDS [V] 10
f [MHz] 1
Crss typ [pF] 0.035
VDS [V] 10
f [MHz] 1
NF typ [dB] 1.8
VDS [V] 10
ID [mA] -
f [MHz] 100





Description

The 2SK543 is a kind of N-Channel MOS silicon FET. It is designed for FM tuner, VHF-band amp applications. There are some features as follows: (1)low noise: NF=1.8 dB typ (f=100 MHz); (2)high power gain: PG=27 dB typ (f=100 MHz); (3)small reverse transfer capacitance: Crss=0.035 pF (VDS=10 V, f=1 MHz).

The following is the absolute maximum ratings of 2SK543 at Ta=25: (1)drain to source voltage, VDS: 25 V; (2)gate to source voltage, VGS: ±5 V; (3)drain current, ID: 3 mA; (4)allowable power dissipation, PD: 200 mW; (5)channel temperature, Tch: 125; (6)storage temperature, Tstg: -55 to +125.

The last one is the electrical characteristics of 2SK543 at Ta=25: (1)drain to source voltage at VGS=-4 V, ID=100A, VDSX: 20 V min; (2)common source gate cutoff current at VDS=0 V, VGS=±5 V, IGSS: 10 nA max; (3)drain current at VDS=10 V, VGS=0 V, IDSS: 1.2 mA min and 12 mA max; (4)gate to source cutoff voltage at VDS=10 V, ID=100A, VGS(off): -2.5 V max; (5)input capacitance at VDS=10 V, VGS=0 V, f=1 MHz, Ciss: 2.4 pF typ ; (6)reverse transfer capacitance at VDS=10 V, VGS=0 V, f=1 MHz, Crss: 0.035 pF typ.






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