MOSFET N-CH 50V 100MA 3CP
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Series: | - | Manufacturer: | SANYO Semiconductor (U.S.A) Corporation | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 50V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 100mA | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 10mA, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | - | Gate Charge (Qg) @ Vgs: | - | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 15pF @ 10V | ||
Power - Max: | 200mW | Mounting Type: | Surface Mount | ||
Package / Case: | TO-236-3, SC-59, SOT-23-3 | Supplier Device Package: | 3-CP |