2SK536-TB-E

MOSFET N-CH 50V 100MA 3CP

product image

2SK536-TB-E Picture
SeekIC No. : 003431938 Detail

2SK536-TB-E: MOSFET N-CH 50V 100MA 3CP

floor Price/Ceiling Price

Part Number:
2SK536-TB-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 15pF @ 10V
Power - Max: 200mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 200mW
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 50V
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 100mA
Input Capacitance (Ciss) @ Vds: 15pF @ 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: 3-CP
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Audio Products
LED Products
Motors, Solenoids, Driver Boards/Modules
Inductors, Coils, Chokes
View more