MOSFET N-CH 600V 5A TO-220FI
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Series: | - | Manufacturer: | ON Semiconductor | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Drain to Source Voltage (Vdss): | 600V | Continuous Drain Current : | 2.1 A | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 2.34 Ohm @ 2.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 5V @ 1mA | Gate Charge (Qg) @ Vgs: | 14.3nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 360pF @ 30V | ||
Power - Max: | 2W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220FI(LS) |
Absolute maximum ratings | |
---|---|
VDSS [V] | 600 |
VGSS [V] | 30 |
ID [A] | 5 |
PD [W] | 30
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=2.5 |
1.8 |
VGS(off) min [V] | 3 |
VGS(off) max [V] | 5 |
|yfs| typ [S] | 2.4 |
Ciss typ [pF] | 360 |
Qg typ [nC] | 14.3 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
600 |
V | |
Gate-to-Source Voltage |
VGSS |
±30 |
V | |
Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature Tch=150°C |
5 |
A |
IDpack*2 |
Tc=25°C (SANYO's ideal heat dissipation condition)*3 |
4 |
A | |
Drain Current (Pulse) |
IDP |
PW10s, duty cycle1% |
18 |
A |
Allowable Power Dissipation |
PD |
2.0 |
W | |
Tc=25°C (SANYO's ideal heat dissipation condition)*3 |
30 |
W | ||
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
--55 to +150 |
°C | |
Avalanche Energy (Single Pulse) *4 |
EAS |
74.6 |
mJ | |
Avalanche Current *5 |
IAV |
5 |
A |
*1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=3.5A *5 L5mH, single pulse Marking : K4198