2SK4198LS

MOSFET N-CH 600V 5A TO-220FI

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SeekIC No. : 003431948 Detail

2SK4198LS: MOSFET N-CH 600V 5A TO-220FI

floor Price/Ceiling Price

Part Number:
2SK4198LS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 600V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 14.3nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 360pF @ 30V
Power - Max: 2W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FI(LS)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 5A
Power - Max: 2W
Drain to Source Voltage (Vdss): 600V
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: ON Semiconductor
Gate Charge (Qg) @ Vgs: 14.3nC @ 10V
Supplier Device Package: TO-220FI(LS)
Input Capacitance (Ciss) @ Vds: 360pF @ 30V
Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 600
VGSS [V] 30
ID [A] 5
PD [W] 30
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=2.5
1.8
VGS(off) min [V] 3
VGS(off) max [V] 5
|yfs| typ [S] 2.4
Ciss typ [pF] 360
Qg typ [nC] 14.3


Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature Tch=150°C
5
A
IDpack*2
Tc=25°C (SANYO's ideal heat dissipation condition)*3
4
A
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
18
A
Allowable Power Dissipation
PD
2.0
W
Tc=25°C (SANYO's ideal heat dissipation condition)*3
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
74.6
mJ
Avalanche Current *5
IAV
5
A

*1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=3.5A *5 L5mH, single pulse Marking : K4198






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