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2SK4002

Features: 􀁺 Low drain−source ON-resistance : RDS (ON) = 4.2 (typ.)􀁺 High forward transfer admittance : |Yfs| = 1.7 S (typ.)􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 600 V)􀁺 Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications ...

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SeekIC No. : 004226990 Detail

2SK4002: Features: 􀁺 Low drain−source ON-resistance : RDS (ON) = 4.2 (typ.)􀁺 High forward transfer admittance : |Yfs| = 1.7 S (typ.)􀁺 Low leakage current : IDSS = 100 A (max...

2SK4002 Data Sheet

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Part Number:
2SK4002
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

􀁺 Low drain−source ON-resistance : RDS (ON) = 4.2 (typ.)
􀁺 High forward transfer admittance : |Yfs| = 1.7 S (typ.)
􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 600 V)
􀁺 Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS=20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
2
A
Pulse (t = 100 s)
(Note 1)
IDP
5
A
Pulse (t = 100 s)
(Note 1)
IDP
8
A
Drain power dissipation
PD
20
W
Single-pulse avalanche energy (Note2)
EAS
93
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
 −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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