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Features: `Low drain−source ON-resistance : RDS (ON) = 0. 33 (typ.)`High forward transfer admittance : |Yfs| = 8.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 500 V)`Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Symbol Ra...

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SeekIC No. : 004226992 Detail

2SK4012: Features: `Low drain−source ON-resistance : RDS (ON) = 0. 33 (typ.)`High forward transfer admittance : |Yfs| = 8.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 500 V)`Enhancement ...

2SK4012 Data Sheet

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Part Number:: 2SK4012
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/7

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2SK4002 evaluate
Features: 􀁺 Low drain−source ON-resistance : RDS (ON) = 4.2 (typ.)􀁺 High ...
2SK4003 evaluate
Features: ` Low drain−source ON-resistance : RDS (ON) = 1.7 (typ.)` Low leakage current : I...
2SK4003(Q) evaluate
MOSFET N-CH 600V 3A PW-MOLD

Product Details

Description

Features:

`Low drain−source ON-resistance : R_{DS (ON)} = 0. 33 (typ.)
`High forward transfer admittance : |Y_fs| = 8.5 S (typ.)
`Low leakage current : I_DSS = 100 A (max) (V_DS = 500 V)
`Enhancement mode : Vth = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristic		Symbol	Rating	Unit
Drain−source voltage		V_DSS	500	V
Drain−gate voltage (RGS = 20 k)		V_DGR	500	V
Gate−source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	13	A
Drain current	Pulse (Note 1)	I_DP	52	A
Drain power dissipation (Tc = 25)		P_D	45	W
Single-pulse avalanche energy (Note 2)		E_AS	1170	mJ
Avalanche current		I_AR	13	A
Repetitive avalanche energy (Note 3)		E_AR	4.5	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SK4012

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