MOSFET NCH 10V DRIVE SERIES
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 3.5 A | ||
Resistance Drain-Source RDS (on) : | 3.25 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220LS-3 | Packaging : | Bulk |
Absolute maximum ratings | |
---|---|
VDSS [V] | 600 |
VGSS [V] | 30 |
PD [W] | 28
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=1.8 |
2.5 |
VGS(off) min [V] | 3 |
VGS(off) max [V] | 5 |
|yfs| typ [S] | 1.6 |
Ciss typ [pF] | 260 |
Qg typ [nC] | 11 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
600 |
V | |
Gate-to-Source Voltage |
VGSS |
±30 |
V | |
Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature Tch=150°C |
3.5 |
A |
IDpack*2 |
Tc=25°C (SANYO's ideal heat dissipation condition)*3 |
3.3 |
A | |
Drain Current (Pulse) |
IDP |
PW10s, duty cycle1% |
13 |
A |
Allowable Power Dissipation |
PD |
3.0 |
W | |
Tc=25°C (SANYO's ideal heat dissipation condition)*3 |
28 |
W | ||
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
--55 to +150 |
°C | |
Avalanche Energy (Single Pulse) *4 |
EAS |
36.6 |
mJ | |
Avalanche Current *5 |
IAV |
3.5 |
A |
*1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=3.5A *5 L5mH, single pulse Marking : K4197