2SK4197LS

MOSFET NCH 10V DRIVE SERIES

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SeekIC No. : 00153534 Detail

2SK4197LS: MOSFET NCH 10V DRIVE SERIES

floor Price/Ceiling Price

US $ .95~1.46 / Piece | Get Latest Price
Part Number:
2SK4197LS
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.46
  • $1.18
  • $1.06
  • $.95
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 3.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220LS-3 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 3.5 A
Package / Case : TO-220LS-3
Resistance Drain-Source RDS (on) : 3.25 Ohms


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 600
VGSS [V] 30
PD [W] 28
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=1.8
2.5
VGS(off) min [V] 3
VGS(off) max [V] 5
|yfs| typ [S] 1.6
Ciss typ [pF] 260
Qg typ [nC] 11


Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature Tch=150°C
3.5
A
IDpack*2
Tc=25°C (SANYO's ideal heat dissipation condition)*3
3.3
A
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
13
A
Allowable Power Dissipation
PD
3.0
W
Tc=25°C (SANYO's ideal heat dissipation condition)*3
28
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
36.6
mJ
Avalanche Current *5
IAV
3.5
A

*1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=3.5A *5 L5mH, single pulse Marking : K4197






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