2SK4196LS

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2W
Drain to Source Voltage (Vdss): 500V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 5.5A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: ON Semiconductor
Gate Charge (Qg) @ Vgs: 14.6nC @ 10V
Supplier Device Package: TO-220FI(LS)
Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds: 360pF @ 30V


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.




Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	UNIT
Drain to Source Voltage	VDSS		500	V
Gate to Source Voltage	VGSS		±30	V
Drain Current (DC)	IDC	Limited only maximum temperature Tch=150°C	5.5	A
	IDpack*2	Tc=25°C (SANYO's ideal heat dissipation condition)*3	5.0
Drain Current (Pulse)	IDP	PW10s, duty cycle1%	21	A
Total Power Dissipation	PD		2.0	W
		Tc=25°C (SANYO's ideal heat dissipation condition)*3	30
Channel Temperature	Tch		150
Storage Temperature	Tstg		55 to +150
Single Avalanche Current *3	IAV		5.5	A
Single Avalanche Energy *3	EAS		93.8	mJ

*1 Shows chip capability
*2 Package limited
*3 SANYO's condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 V_DD=99V, L=5mH, I_AV=5.5A
*5 L5mH, single pulse
Marking : K4196

Absolute maximum ratings
VDSS [V]	500
VGSS [V]	30
ID [A]	5.5
PD [W]	30 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=2.8	1.2
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	2.5
Ciss typ [pF]	360
Qg typ [nC]	14.6