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2SK4178

Features: • Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A)• Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)• 4.5 V drive available• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A)• Low gate to drain charg...

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SeekIC No. : 004227054 Detail

2SK4178: Features: • Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A)• Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)• 4.5 V drive available• ...

2SK4178 Data Sheet

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Part Number:
2SK4178
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A)
• Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available



• Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 30 A)
• Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available




Specifications

Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25)
ID(DC)
±48
A
Drain Current (pulse) Note1
ID(pulse)
±144
A
Total Power Dissipation (TC = 25)
PT1
33
W
Total Power Dissipation (TA = 25)
PT2
1.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
Single Avalanche Current Note2
IAS
23
A
Single Avalanche Energy Note2
EAS
52.9
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 0.1 mH



Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25)
ID(DC)
±48
A
Drain Current (pulse) Note1
ID(pulse)
±144
A
Total Power Dissipation (TC = 25)
PT1
33
W
Total Power Dissipation (TA = 25)
PT2
1.0
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
Single Avalanche Current Note2
IAS
23
A
Single Avalanche Energy Note2
EAS
52.9
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 0.1 mH




Description

The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.








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