2SK4125

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 17 A
Packaging : Tray
Resistance Drain-Source RDS (on) : 610 mOhms
Package / Case : TO-3PB-3


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V]	600
VGSS [V]	30
ID [A]	17
PD [W]	170 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=7	0.47
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	9
Ciss typ [pF]	1200
Qg typ [nC]	46

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		600	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	ID		17	mA
Drain Current (Pulse)	IDP	PW10s, duty cycle1%	52	A
Allowable Power Dissipation	PD		2.5	W
		Tc=25 (SANYO's ideal heat dissipation condition)	170	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *1	EAS		86.5	mJ
Avalanche Current *2	IAV		17	A

*1 V_DD=99V, L=500H, I_AV=17A
*2 L500H, single pulse
Marking : K4125