2SK4124

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 30 V
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.33 Ohms
Packaging : Tray
Package / Case : TO-3PB


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Avalanche resistance guarantee.




Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		500	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	ID		20	A
Drain Current (Pulse)	IDP	PW10µs, duty cycle1%	60	A
Allowable Power Dissipation	PC		2.5	W
		Tc=25SANYO's ideal heat dissipation condition)	170	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *1	EAS		124	mJ
Avalanche Current *1	IAV		20	A

*1 VDD=99V, L=500µH, IAV=20A
*2 L500µH, single pulse
Marking : K4124

Absolute maximum ratings
VDSS [V]	500
VGSS [V]	30
ID [A]	20
PD [W]	170 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=8	0.33
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	9.7
Ciss typ [pF]	1200
Qg typ [nC]	46.6