2SK4111(Q,T)

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 10A
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
Supplier Device Package: TO-220NIS


Parameters:

Technical/Catalog Information	2SK4111(Q,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	750 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	2-10R1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK4111 Q,T 2SK4111Q,T