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2SK4108

Application􀁺 `Low drain−source ON resistance : RDS (ON) = 0. 21 (typ.)􀁺 `High forward transfer admittance : |Yfs| = 14 S (typ.)􀁺 `Low leakage current : IDSS = 100 A (max) (VDS = 500 V)􀁺 `Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specificati...

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2SK4108: Application􀁺 `Low drain−source ON resistance : RDS (ON) = 0. 21 (typ.)􀁺 `High forward transfer admittance : |Yfs| = 14 S (typ.)􀁺 `Low leakage current : IDSS = 100 A ...

2SK4108 Data Sheet

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Part Number:
2SK4108
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

􀁺 `Low drain−source ON resistance : RDS (ON) = 0. 21 (typ.)
􀁺 `High forward transfer admittance : |Yfs| = 14 S (typ.)
􀁺 `Low leakage current                     : IDSS = 100 A (max) (VDS = 500 V)
􀁺 `Enhancement mode                      : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drain−source voltage VDSS 500 V
Drain−gate voltage (RGS = 20 k) VDGR 500 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 20 A
Pulse (Note 1) IDP 80 A
Drain power dissipation (Tc = 25) PD 150 W
Single-pulse avalanche energy (Note 2) EAS 960 mJ
Avalanche current IAR 20 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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