Application `Low drain−source ON resistance : RDS (ON) = 0. 21 (typ.) `High forward transfer admittance : |Yfs| = 14 S (typ.) `Low leakage current : IDSS = 100 A (max) (VDS = 500 V) `Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specificati...
2SK4108: Application `Low drain−source ON resistance : RDS (ON) = 0. 21 (typ.) `High forward transfer admittance : |Yfs| = 14 S (typ.) `Low leakage current : IDSS = 100 A ...
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Characteristic | Symbol | Rating | Unit | |
Drain−source voltage | VDSS | 500 | V | |
Drain−gate voltage (RGS = 20 k) | VDGR | 500 | V | |
Gate−source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 20 | A |
Pulse (Note 1) | IDP | 80 | A | |
Drain power dissipation (Tc = 25) | PD | 150 | W | |
Single-pulse avalanche energy (Note 2) | EAS | 960 | mJ | |
Avalanche current | IAR | 20 | A | |
Repetitive avalanche energy (Note 3) | EAR | 15 | mJ | |
Channel temperature | Tch | 150 | ||
Storage temperature range | Tstg | −55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).