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2SK4107

Features: • Low drain−source ON resistance : RDS (ON) = 0. 33 (typ.)• High forward transfer admittance : |Yfs| = 8.5 S (typ.)• Low leakage current : IDSS = 100 A (max) (VDS = 500 V)• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications It...

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SeekIC No. : 004227039 Detail

2SK4107: Features: • Low drain−source ON resistance : RDS (ON) = 0. 33 (typ.)• High forward transfer admittance : |Yfs| = 8.5 S (typ.)• Low leakage current : IDSS = 100 A (max) (VDS ...

2SK4107 Data Sheet

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Part Number:
2SK4107
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain−source ON resistance : RDS (ON) = 0. 33 (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 A (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Item
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
500
V
Drain?gate voltage (RGS = 20 k)
VDGR
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current DC (Note 1)
ID
IDP
15
60
A
Pulse (Note 1)
Drain power dissipation
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
765
mJ
Avalanche current
IAR
15
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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