2SK4097LS

MOSFET N-CH 500V 9.5A TO-220FI

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SeekIC No. : 003433695 Detail

2SK4097LS: MOSFET N-CH 500V 9.5A TO-220FI

floor Price/Ceiling Price

Part Number:
2SK4097LS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 30nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 750pF @ 30V
Power - Max: 2W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FI(LS)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 9.5A
Drain to Source Voltage (Vdss): 500V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)
Input Capacitance (Ciss) @ Vds: 750pF @ 30V


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature
9.5
A
IDpack*2
SANYO's ideal heat dissipation condition
8.3
A
Drainpeak Current(Pulse)
IDP
PW10s, duty cycle1%
38
A
Allowable Power Dissipation
PD
2.0
W
Tc=25(SANYO's ideal heat dissipation condition)
35
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
Avalanche Energy (Single Pulse) *3
EAS
280
mJ
Avalanche Current *4
IAV
9.5
A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=5mH, IAV=9.5A
*4 L5mH, single pulse
Marking : K4097


Absolute maximum ratings
VDSS [V] 500
VGSS [V] 30
ID [A] 9.5
PD [W] 35
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=5
0.5
VGS(off) min [V] 3
VGS(off) max [V] 5
|yfs| typ [S] 6
Ciss typ [pF] 750
Qg typ [nC] 30





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