2SK4097LS

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 9.5A
Drain to Source Voltage (Vdss): 500V
Gate Charge (Qg) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)
Input Capacitance (Ciss) @ Vds: 750pF @ 30V


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		500	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	IDc*1	Limited only by maximum temperature	9.5	A
	IDpack*2	SANYO's ideal heat dissipation condition	8.3	A
Drainpeak Current(Pulse)	IDP	PW10s, duty cycle1%	38	A
Allowable Power Dissipation	PD		2.0	W
		Tc=25(SANYO's ideal heat dissipation condition)	35	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *3	EAS		280	mJ
Avalanche Current *4	IAV		9.5	A

*1 Shows chip capability
*2 Package limited
*3 V_DD=99V, L=5mH, I_AV=9.5A
*4 L5mH, single pulse
Marking : K4097

Absolute maximum ratings
VDSS [V]	500
VGSS [V]	30
ID [A]	9.5
PD [W]	35 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=5	0.5
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	6
Ciss typ [pF]	750
Qg typ [nC]	30