MOSFET N-CH 500V 9.5A TO-220FI
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Series: | - | Manufacturer: | SANYO Semiconductor (U.S.A) Corporation | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Continuous Drain Current : | 2.1 A | Drain to Source Voltage (Vdss): | 500V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 9.5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | - | Gate Charge (Qg) @ Vgs: | 30nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 750pF @ 30V | ||
Power - Max: | 2W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220FI(LS) |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
500 |
V | |
Gate-to-Source Voltage |
VGSS |
±30 |
V | |
Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature |
9.5 |
A |
IDpack*2 |
SANYO's ideal heat dissipation condition |
8.3 |
A | |
Drainpeak Current(Pulse) |
IDP |
PW10s, duty cycle1% |
38 |
A |
Allowable Power Dissipation |
PD |
2.0 |
W | |
Tc=25(SANYO's ideal heat dissipation condition) |
35 |
W | ||
Channel Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
||
Avalanche Energy (Single Pulse) *3 |
EAS |
280 |
mJ | |
Avalanche Current *4 |
IAV |
9.5 |
A |
Absolute maximum ratings | |
---|---|
VDSS [V] | 500 |
VGSS [V] | 30 |
ID [A] | 9.5 |
PD [W] | 35
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=5 |
0.5 |
VGS(off) min [V] | 3 |
VGS(off) max [V] | 5 |
|yfs| typ [S] | 6 |
Ciss typ [pF] | 750 |
Qg typ [nC] | 30 |