2SK4096LS

MOSFET N-CH 500V 8A TO-220FI

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SeekIC No. : 003432749 Detail

2SK4096LS: MOSFET N-CH 500V 8A TO-220FI

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Part Number:
2SK4096LS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: SANYO Semiconductor (U.S.A) Corporation
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 24nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 600pF @ 30V
Power - Max: 2W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FI(LS)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) @ Vds: 600pF @ 30V
Drain to Source Voltage (Vdss): 500V
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 500
VGSS [V] 30
ID [A] 8
PD [W] 33
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=4
0.65
VGS(off) min [V] 3
VGS(off) max [V] 5
|yfs| typ [S] 4.5
Ciss typ [pF] 600
Qg typ [nC] 24


Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature
8
A
IDpack*2
SANYO's ideal heat dissipation condition
7.1
A
Drainpeak Current(Pulse)
IDP
PW10µs, duty cycle1%
32
A
Allowable Power Dissipation
PD
Tc=25 (SANYO's ideal heat dissipation condition)
33
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
Avalanche Energy (Single Pulse) *3
EAS
397
mJ
Avalanche Current *4
IAV
8
A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=10mH, IAV=8A
*4 L10mH, single pulse
Marking : K4096





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