Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) @ Vds: 600pF @ 30V
Drain to Source Voltage (Vdss): 500V
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)
Features: • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Pinout
Specifications
| Absolute maximum ratings |
| VDSS [V] |
500 |
| VGSS [V] |
30 |
| ID [A] |
8 |
| PD [W] |
33
Tc=25°C |
| Electrical characteristics |
RDS(on) typ []
VGS=10V
ID [A]=4 |
0.65 |
| VGS(off) min [V] |
3 |
| VGS(off) max [V] |
5 |
| |yfs| typ [S] |
4.5 |
| Ciss typ [pF] |
600 |
| Qg typ [nC] |
24 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain to Source Voltage |
VDSS |
|
500 |
V |
| Gate to Source Voltage |
VGSS |
|
±30 |
V |
| Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature |
8 |
A |
|
IDpack*2 |
SANYO's ideal heat dissipation condition |
7.1 |
A |
| Drainpeak Current(Pulse) |
IDP |
PW10µs, duty cycle1% |
32 |
A |
| Allowable Power Dissipation |
PD |
Tc=25 (SANYO's ideal heat dissipation condition) |
33 |
W |
| Channel Temperature |
Tch |
|
150 |
|
| Storage Temperature |
Tstg |
|
-55 to +150 |
|
| Avalanche Energy (Single Pulse) *3 |
EAS |
|
397 |
mJ |
| Avalanche Current *4 |
IAV |
|
8 |
A |
*1 Shows chip capability
*2 Package limited
*3 V
DD=99V, L=10mH, I
AV=8A
*4 L10mH, single pulse
Marking : K4096
2SK4096LS Data Sheet
