2SK4094

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 100A
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 220nC @ 10V
Power - Max: 1.75W
Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Input Capacitance (Ciss) @ Vds: 12500pF @ 20V


Features:

• Low ON-resistance.
• Load switching applications.
• Avalanche resistance guarantee.




Pinout






Specifications

Parameter	Symbol	Conditions	Rating	Unit
Drain to source voltage	VDSS		60	V
Gate to source voltage	VGSS		±20	V
Drain current (DC)	ID		100	A
Drain current(Pulse)	Idp *	PW10ms, duty cycle1%	400	A
Allowable Power Dissipation	PD	Tc=25°C	1.75 90	W
Channel temperature	Tch		150
Storage temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *1	EAS		850	mJ
Avalanche Current *2	IAV		70	A

Note : *1 VDD=30V, L=200mH, IAV=70A
*2 L200mH, Single pulse

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	100
PD [W]	90 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=50	0.0038
RDS(on) typ [] VGS=4V ID [A]=50	0.0049
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	75
Ciss typ [pF]	12500
Qg typ [nC]	220