2SK4089LS

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.65 Ohms
Package / Case : TO-220FL


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V]	650
VGSS [V]	30
ID [A]	12
PD [W]	40 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=6	0.55
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	7.5
Ciss typ [pF]	1200
Qg typ [nC]	45.4

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		650	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	IDc*1	Limited only by maximum temperature	12	A
	IDpack*2	SANYO's ideal heat dissipation condition	8.5	A
Drainpeak Current(Pulse)	IDP	PW10s, duty cycle1%	48	A
Allowable Power Dissipation	PD		2.0	W
		Tc=25(SANYO's ideal heat dissipation condition)	33	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *3	EAS		84	mJ
Avalanche Current *4	IAV		12	A

*1 Shows chip capability
*2 Package limited
*3 V_DD=99V, L=1mH, I_AV=12A
*4 L1mH, single pulse
Marking : K4089