MOSFET POWER MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 11 A | ||
Resistance Drain-Source RDS (on) : | 0.65 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FL | Packaging : | Bulk |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain-to-Source Voltage |
VDSS |
650 |
V | |
Gate-to-Source Voltage |
VGSS |
±30 |
V | |
Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature |
11 |
A |
IDpack*2 |
SANYO's ideal heat dissipation condition |
7.5 |
A | |
Drainpeak Current(Pulse) |
IDP |
PW10s, duty cycle1% |
40 |
A |
Allowable Power Dissipation |
PD |
2.0 |
W | |
Tc=25 (SANYO's ideal heat dissipation condition) |
37 |
W | ||
Channel Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
||
Avalanche Energy (Single Pulse) *3 |
EAS |
71 |
mJ | |
Avalanche Current *4 |
IAV |
11 |
A |
Absolute maximum ratings | |
---|---|
VDSS [V] | 650 |
VGSS [V] | 30 |
ID [A] | 11 |
PD [W] | 37
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=5.5 |
0.65 |
VGS(off) min [V] | 3 |
VGS(off) max [V] | 5 |
|yfs| typ [S] | 6.5 |
Ciss typ [pF] | 1000 |
Qg typ [nC] | 37.6 |