2SK4085LS

MOSFET POWER MOSFET

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2SK4085LS Picture
SeekIC No. : 00145824 Detail

2SK4085LS: MOSFET POWER MOSFET

floor Price/Ceiling Price

US $ 2.01~3.7 / Piece | Get Latest Price
Part Number:
2SK4085LS
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $3.7
  • $3.12
  • $2.57
  • $2.01
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 430 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220LS-3 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 430 mOhms
Package / Case : TO-220LS-3


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 500
VGSS [V] 30
ID [A] 16
PD [W] 40
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=8
0.33
VGS(off) min [V] 3
VGS(off) max [V] 5
|yfs| typ [S] 9
Ciss typ [pF] 1200
Qg typ [nC] 46.6


Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature
16
A
IDpack*2
SANYO's ideal heat dissipation condition
11
A
Drainpeak Current(Pulse)
IDP
PW10s, duty cycle1%
60
A
Allowable Power Dissipation
PD
2.0
W
Tc=25 (SANYO's ideal heat dissipation condition)
40
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
Avalanche Energy (Single Pulse) *3
EAS
159
mJ
Avalanche Current *4
IAV
16
A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=1mH, IAV=16A
*4 L1mH, single pulse
Marking : K4085





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