2SK4084LS

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 2W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 14A
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Rds On (Max) @ Id, Vgs: 520 mOhm @ 7A, 10V
Gate Charge (Qg) @ Vgs: 38.4nC @ 10V
Input Capacitance (Ciss) @ Vds: 1000pF @ 30V
Supplier Device Package: TO-220FI(LS)


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain to Source Voltage	VDSS		500	V
Gate to Source Voltage	VGSS		±30	V
Drain Current (DC)	IDc*1	Limited only by maximum temperature	14	A
	IDpack*2	SANYO's ideal heat dissipation condition	9.6	A
Drainpeak Current(Pulse)	IDP	PW10s, duty cycle1%	50	A
Allowable Power Dissipation	PD		2.0	W
		Tc=25 (SANYO's ideal heat dissipation condition)	37	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *3	EAS		122	mJ
Avalanche Current *4	IAV		14	A

*1 Shows chip capability
*2 Package limited
*3 V_DD=99V, L=10mH, I_AV=14A
*4 L1mH, single pulse
Marking : K4084

Absolute maximum ratings
VDSS [V]	500
VGSS [V]	30
ID [A]	14
PD [W]	37 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=7	0.4
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	7
Ciss typ [pF]	1000
Qg typ [nC]	38.4