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2SK4081

Features: `Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A) `Low gate chargeQG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) `Gate voltage rating: ±30 V `Avalanche capability ratings Specifications Drain to Source Voltage (VGS =0 V) Gate to Source Voltage (VDS =0 V) Dra...

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SeekIC No. : 004227027 Detail

2SK4081: Features: `Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A) `Low gate chargeQG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) `Gate voltage rating: ±30 V `Avalanche capability ...

2SK4081 Data Sheet

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Part Number:
2SK4081
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low on-state resistance  RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0  A) 
`Low gate charge   QG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) 
`Gate voltage rating: ±30 V 
`Avalanche capability ratings


Specifications

Drain to Source Voltage (VGS =0 V)
Gate to Source Voltage (VDS =0 V)
Drain Current (DC) (TC=25)
Drain Current (pulse)Note1
Total Power Dissipation (TC = 25)
Total Power Dissipation (TA = 25)Note2
Channel Temperature
Storage Temperature
Single Avalanche CurrentNote3
Single Avalanche EnergyNote3
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
600
±30
±2.0
±8.0
30
1.0
150
55 to 150
1.4
117
V
V
A
A
W
W


A
mJ

Notes 1. PW10s, Duty Cycle1%
          2. Mounted on glass epoxy board of 40 mm * 40 mm * 1.6 mm
          3. Starting Tch = 25, VDD = 150 V, RG = 25 , VGS = 200 V




Description

The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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