Features: `Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A) `Low gate chargeQG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) `Gate voltage rating: ±30 V `Avalanche capability ratings Specifications Drain to Source Voltage (VGS =0 V) Gate to Source Voltage (VDS =0 V) Dra...
2SK4081: Features: `Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A) `Low gate chargeQG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) `Gate voltage rating: ±30 V `Avalanche capability ...
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Drain to Source Voltage (VGS =0 V) Gate to Source Voltage (VDS =0 V) Drain Current (DC) (TC=25) Drain Current (pulse)Note1 Total Power Dissipation (TC = 25) Total Power Dissipation (TA = 25)Note2 Channel Temperature Storage Temperature Single Avalanche CurrentNote3 Single Avalanche EnergyNote3 |
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS |
600 ±30 ±2.0 ±8.0 30 1.0 150 55 to 150 1.4 117 |
V V A A W W A mJ |
Notes 1. PW10s, Duty Cycle1%
2. Mounted on glass epoxy board of 40 mm * 40 mm * 1.6 mm
3. Starting Tch = 25, VDD = 150 V, RG = 25 , VGS = 200 V
The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.