Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 90A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Gate Charge (Qg) @ Vgs: 220nC @ 10V
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220FI(LS)
Input Capacitance (Ciss) @ Vds: 12500pF @ 20V
Rds On (Max) @ Id, Vgs: 5 mOhm @ 45A, 10V
Features: • Ultralow ON-resistance.
• Load switching applications.
• Avalanche resistance guarantee.Pinout
Specifications
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain-to-Source Voltage |
VDSS
|
|
60 |
V |
| Gate-to-Source Voltage |
VGSS |
|
±20 |
V |
| Drain Current (DC) |
ID |
|
90 |
A |
| Drain Current (Pulse) |
IDP |
PW10s, duty cycle1% |
360 |
A |
| Allowable Power Dissipation |
PD |
Tc=25°C |
2.0
40 |
W |
| Channel Temperature |
Tch |
|
150 |
|
| Storage Temperature |
Tstg |
|
-55to+150 |
|
| Avalanche Energy (Single Pulse) *1 |
EAS |
|
850 |
mJ |
| Avalanche Current *2 |
IAV |
|
70 |
A |
| Absolute maximum ratings |
| VDSS [V] |
60 |
| VGSS [V] |
20 |
| ID [A] |
90 |
| PD [W] |
40
Tc=25°C |
| Electrical characteristics |
RDS(on) typ []
VGS=10V
ID [A]=45 |
0.0038 |
RDS(on) typ []
VGS=4V
ID [A]=45 |
0.005 |
| VGS(off) min [V] |
1.2 |
| VGS(off) max [V] |
2.6 |
| |yfs| typ [S] |
74 |
| Ciss typ [pF] |
12500 |
| Qg typ [nC] |
220 |
2SK4073LS Data Sheet
