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2SK4070

Features: • Low on-state resistance RDS(on) = 11 MAX. (VGS = 10 V, ID = 0.5 A)• Low gate charge QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)• Gate voltage rating : ±30 V• Avalanche capability ratingsSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 600 VGate t...

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SeekIC No. : 004227024 Detail

2SK4070: Features: • Low on-state resistance RDS(on) = 11 MAX. (VGS = 10 V, ID = 0.5 A)• Low gate charge QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)• Gate voltage rating : ±30 V&#...

2SK4070 Data Sheet

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Part Number:
2SK4070
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on) = 11 MAX. (VGS = 10 V, ID = 0.5 A)
• Low gate charge
   QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)
• Gate voltage rating : ±30 V
• Avalanche capability ratings


Specifications

Drain to Source Voltage (VGS = 0 V)                   VDSS                                            600 V
Gate to Source Voltage (VDS = 0 V)                    VGSS                                           ±30 V
Drain Current (DC) (TC = 25°C)                         ID(DC)                                         ±1.0 A
Drain Current (pulse) Note1                                ID(pulse)                                     ±4.0 A
Total Power Dissipation (TC = 25°C)                  PT1                                                22 W
Total Power Dissipation (TA = 25°C) Note2         PT2                                               1.0 W
Channel Temperature                                          Tch                                              150 °C
Storage Temperature                                           Tstg                                      −55 to +150 °C
Single Avalanche Current Note3                            IAS                                                0.8 A
Single Avalanche Energy Note3                              EAS                                              38.4 mJ

Notes 1. PW < 10 s, Duty Cycle < 1%
          2. Mounted on glass epoxy board of 40 mm * 40 mm * 1.6 mm
          3. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V


Description

The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.




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