2SK4069-ZK-E1

The 2SK4069-ZK-E1 is one member of the 2SK4069 family which is designed as the N-Channel Silicon MOSFET device that has four points of features:(1)Low ON-resistance, low input capacitance, ultrahigh-speed switching; (2)High reliability (Adoption of HVP process); (3)Attachment workability is good by Mica-less package; (4)Avalanche resistance guarantee.

The absolute maximum ratings of the 2SK4069-ZK-E1 can be summarized as:(1)Drain-to-Source Voltage: 450 V;(2)Gate-to-Source Voltage: ±30 V;(3)Drain Current (DC): 18 A or 13.6 A;(4)Drain Current (Pulse): 72 A;(5)Allowable Power Dissipation: 2.0 W;(6)Channel Temperature: 150 °C;(7)Storage Temperature: -55 to +150 °C;(8)Avalanche Energy (Single Pulse): 1.03 J;(9)Avalanche Current: 18 A.

The electrical characteristics of 2SK4069-ZK-E1 can be summarized as:(1)Drain-to-Source Breakdown Voltage: 450 V;(2)Zero-Gate Voltage Drain Current: 100 uA;(3)Gate-to-Source Leakage Current: ±100 nA;(4)Cutoff Voltage: 3 to 5 V;(5)Forward Transfer Admittance: 6 to 12 S;(6)Static Drain-to-Source On-State Resistance: 0.24 to 0.32 ;(7)Input Capacitance: 2150 pF;(8)Output Capacitance: 230 pF;(9)Diode Forward Voltage: 0.97 to 1.2 V. If you want to know more information about the 2SK4069-ZK-E1, please download the datasheet in www.seekic.com or www.chinaicmart.com .