2SK4059TV Selling Leads, Price trend, 2SK4059TV DataSheet download, circuit diagram from SeekIC.com

Specifications Parameter Symbol Value Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 mW Junction Temperature TJ 125 Storage temperature range TSTG −55~125 Note: Using continuously under heavy loads ...

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2SK4059TV: Specifications Parameter Symbol Value Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 mW Junction Temperature TJ 12...

2SK4059TV Data Sheet

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Part Number:: 2SK4059TV
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/14

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Recent History
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Features: ` Low drain−source ON-resistance : RDS (ON) = 1.7 (typ.)` Low leakage current : I...
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MOSFET N-CH 600V 3A PW-MOLD

Product Details

Description

Specifications

Parameter	Symbol	Value	Unit
Gate-Drain voltage	V_GDO	-20	V
Gate Current	I_G	10	mA
Drain power dissipation (Ta = 25)	P_D	100	mW
Junction Temperature	T_J	125
Storage temperature range	T_STG	−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SK4059TV

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