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2SK4058-ZK-E1-AY

MOSFET N-CH 25V TO-252

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SeekIC No. : 003434122 Detail

2SK4058-ZK-E1-AY: MOSFET N-CH 25V TO-252

2SK4058-ZK-E1-AY Data Sheet

floor Price/Ceiling Price

US $ .3~.68 / Piece | Get Latest Price
Part Number:
2SK4058-ZK-E1-AY
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.68
  • $.61
  • $.54
  • $.49
  • $.42
  • $.38
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 48A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 24A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 31nC @ 12V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1670pF @ 10V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (MP-3ZK)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: -
Input Capacitance (Ciss) @ Vds: 1670pF @ 10V
Manufacturer: Renesas Electronics America
Supplier Device Package: TO-252 (MP-3ZK)
Current - Continuous Drain (Id) @ 25° C: 48A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 24A, 10V
Gate Charge (Qg) @ Vgs: 31nC @ 12V


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