MOSFET POWER MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 20 A | ||
| Resistance Drain-Source RDS (on) : | 21 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220LS-3 | Packaging : | Bulk |

|
Parameter |
Symbol | Conditions | Ratings | Unit |
| Drain-to-Source Voltage | VDSS | 30 | V | |
| Gate-to-Source Voltage | VGSS | ±10 | V | |
| Drain Current (DC) | ID | 20 | A | |
| Drain Current (Pulse) | IDP | PW10s, duty cycle1% | 80 | A |
| Allowable Power Dissipation | PD | 2.0 | W | |
| Tc=25 | 20 | W | ||
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | --55 to +150 | ||
| Avalanche Energy (Single Pulse) *1 | EAS | 147 | mJ | |
| Avalanche Current *2 | IAV | 20 | A |
| Absolute maximum ratings | |
|---|---|
| VDSS [V] | 30 |
| VGSS [V] | 10 |
| ID [A] | 20 |
| PD [W] | 20
Tc=25°C |
| Electrical characteristics | |
|---|---|
| RDS(on) typ [] VGS=4V ID [A]=10 |
0.016 |
| RDS(on) typ [] VGS=2.5V ID [A]=10 |
0.017 |
| VGS(off) min [V] | 0.4 |
| VGS(off) max [V] | 1.3 |
| |yfs| typ [S] | 25 |
| Ciss typ [pF] | 3000 |
| Qg typ [nC] | 37 |