MOSFET POWER MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 21 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220LS-3 | Packaging : | Bulk |
Parameter |
Symbol | Conditions | Ratings | Unit |
Drain-to-Source Voltage | VDSS | 30 | V | |
Gate-to-Source Voltage | VGSS | ±10 | V | |
Drain Current (DC) | ID | 20 | A | |
Drain Current (Pulse) | IDP | PW10s, duty cycle1% | 80 | A |
Allowable Power Dissipation | PD | 2.0 | W | |
Tc=25 | 20 | W | ||
Channel Temperature | Tch | 150 | ||
Storage Temperature | Tstg | --55 to +150 | ||
Avalanche Energy (Single Pulse) *1 | EAS | 147 | mJ | |
Avalanche Current *2 | IAV | 20 | A |
Absolute maximum ratings | |
---|---|
VDSS [V] | 30 |
VGSS [V] | 10 |
ID [A] | 20 |
PD [W] | 20
Tc=25°C |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=4V ID [A]=10 |
0.016 |
RDS(on) typ [] VGS=2.5V ID [A]=10 |
0.017 |
VGS(off) min [V] | 0.4 |
VGS(off) max [V] | 1.3 |
|yfs| typ [S] | 25 |
Ciss typ [pF] | 3000 |
Qg typ [nC] | 37 |