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2SK4042

Application• Low drain-source ON resistance: RDS (ON) = 0.7 (typ.)• High forward transfer admittance: |Yfs| = 6.5S (typ.)• Low leakage current: IDSS = 100 A (VDS = 500 V)• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Symbol Characteristic R...

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2SK4042: Application• Low drain-source ON resistance: RDS (ON) = 0.7 (typ.)• High forward transfer admittance: |Yfs| = 6.5S (typ.)• Low leakage current: IDSS = 100 A (VDS = 500 V)• En...

2SK4042 Data Sheet

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Part Number:
2SK4042
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Application

• Low drain-source ON resistance: RDS (ON) = 0.7 (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Symbol Characteristic Rating Unit
VDSS Drain-Source Voltage 500 V
VDGR Drain?gate voltage (RGS = 20 k) 500 V
VGSS Gate?source voltage ±30
 V
ID

IDP		 Drain current DC (Note 1) 8 A
Pulse (Note 1) 32
PD Drain power dissipation (Tc=25)
40 W
EAS Single-pulse avalanche energy
(Note 2)		 312 mJ
IAR Avalanche current 8 A
EAR Repetitive avalanche energy (Note 3) 4 mJ
Tch Channel temperature 150
Tstg Storage temperature range -55~150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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