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2SK4026

Features: • Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)• High forward transfer admittance: |Yfs| = 0.85 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characterist...

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2SK4026: Features: • Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)• High forward transfer admittance: |Yfs| = 0.85 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)&#...

2SK4026 Data Sheet

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Part Number:
2SK4026
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)
• High forward transfer admittance: |Yfs| = 0.85 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic
  
Symbol
Rating
Unit
Drain-source voltage  
VDSS
600
V
Drain-gate voltage (RGS = 20 k)  
VDGR
600
V
Gate-source voltage  
VGSS
±30
V
Drain current DC (Note 1)
ID
1
A
Pulse (Note 1)
IDP
2
Drain power dissipation (Tc = 25)  
PD
20
W
Single pulse avalanche energy
(Note 2)		  
EAS
56
mJ
Avalanche current  
IAR
1
A
Repetitive avalanche energy (Note 3)  
EAR
2
mJ
Channel temperature  
Tch
150
Storage temperature range  
Tstg
−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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