2SK4026 Selling Leads, Price trend, 2SK4026 DataSheet download, circuit diagram from SeekIC.com

Features: • Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)• High forward transfer admittance: |Yfs| = 0.85 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characterist...

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SeekIC No. : 004227005 Detail

2SK4026: Features: • Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.)• High forward transfer admittance: |Yfs| = 0.85 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)&#...

2SK4026 Data Sheet

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Part Number:: 2SK4026
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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2SK4002 evaluate
Features: 􀁺 Low drain−source ON-resistance : RDS (ON) = 4.2 (typ.)􀁺 High ...
2SK4003 evaluate
Features: ` Low drain−source ON-resistance : RDS (ON) = 1.7 (typ.)` Low leakage current : I...
2SK4003(Q) evaluate
MOSFET N-CH 600V 3A PW-MOLD

Product Details

Description

Features:

• Low drain-source ON-resistance: R_DS (ON) = 6.4 (typ.)
• High forward transfer admittance: |Yfs| = 0.85 S (typ.)
• Low leakage current: I_DSS = 100 A (max) (V_DSS = 600 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)

Specifications

Characteristic		Symbol	Rating	Unit
Drain-source voltage		VDSS	600	V
Drain-gate voltage (R_GS = 20 k)		VDGR	600	V
Gate-source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	1	A
Drain current	Pulse (Note 1)	I_DP	2	A
Drain power dissipation (Tc = 25)		P_D	20	W
Single pulse avalanche energy (Note 2)		E_AS	56	mJ
Avalanche current		I_AR	1	A
Repetitive avalanche energy (Note 3)		E_AR	2	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SK4026

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