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2SK4021

Features: `Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 250 V)`Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Symbol Ratings Uni...

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SeekIC No. : 004227002 Detail

2SK4021: Features: `Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.)`High forward transfer admittance : |Yfs| = 4.5 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 250 V)`Enhancement mode : V...

2SK4021 Data Sheet

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Part Number:
2SK4021
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.)
`High forward transfer admittance : |Yfs| = 4.5 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
`Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Drain−gate voltage (RGS = 20 k)
VDGR
250
V
Gate to source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
4.5
A
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc = 25)
PD
20
A
Single-pulse avalanche energy (Note 2)
EAS
51
A
Avalanche energy
IAR
4.5
mJ
Repetitive avalanche energy (Note 3)
EAR
2.0
W
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate  reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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