Application4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics S...
2SK4018: Application4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V...
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Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
100 |
V | |
Drain?gate voltage (RGS = 20 k) |
VDGR |
100 |
V | |
Gate?source voltage |
VGSS |
±20 |
V | |
Drain current | DC (Note 1) |
ID |
3 |
A
|
Pulse (Note 1) |
IDP |
12 | ||
Drain power dissipation (Tc = 25) |
PD |
20 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
140 |
mJ | |
Avalanche current |
IAR |
3 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
2 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
TSTG |
-55 ~ 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).