Application`4 V gate drive `Low drainsource ON-resistance : RDS (ON) = 0.07 (typ.) `High forward transfer admittance : |Yfs| = 6.0 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 60 V)` Enhancement mode : Vth= 0.8~2.0 V (VDS= 10 V, ID= 1 mA)Specifications Characteristic Symbol ...
2SK4017: Application`4 V gate drive `Low drainsource ON-resistance : RDS (ON) = 0.07 (typ.) `High forward transfer admittance : |Yfs| = 6.0 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 60 V)` Enha...
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Characteristic |
Symbol |
Rating |
Unit | |
Drain-source voltage Drain-gate voltage (RGS=20k) Gate-source voltage |
VDSS VDGR VGSS |
60 60 ±20 |
V V V | |
Drain current | DC (Note 1) |
ID |
5 |
A |
Pulse (Note 1) |
IDP |
20 | ||
Drain power dissipation (Tc=25) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range |
PD EAS IAR EAR Tch Tstg |
20 40.5 5 2 150 -55~150 |
W mJ A mJ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).