2SK4017

Application`4 V gate drive `Low drainsource ON-resistance : RDS (ON) = 0.07 (typ.) `High forward transfer admittance : |Yfs| = 6.0 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 60 V)` Enhancement mode : Vth= 0.8~2.0 V (VDS= 10 V, ID= 1 mA)Specifications Characteristic Symbol ...

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SeekIC No. : 004226998 Detail

2SK4017: Application`4 V gate drive `Low drainsource ON-resistance : RDS (ON) = 0.07 (typ.) `High forward transfer admittance : |Yfs| = 6.0 S (typ.) `Low leakage current : IDSS= 100 A (max) (VDS= 60 V)` Enha...

floor Price/Ceiling Price

Part Number:
2SK4017
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Application

`4 V gate drive 
`Low drainsource ON-resistance : RDS (ON) = 0.07  (typ.)
`High forward transfer admittance : |Yfs| = 6.0 S (typ.) 
`Low leakage current : IDSS= 100 A (max) (VDS= 60 V) 
` Enhancement mode : Vth = 0.8~2.0 V (VDS= 10 V, ID= 1 mA) 



Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS=20k)
Gate-source voltage
VDSS
VDGR
VGSS
60
60
±20
V
V
V
Drain current DC (Note 1)
ID
5
A
Pulse (Note 1)
IDP
20
Drain power dissipation (Tc=25)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
PD
EAS
IAR
EAR
Tch
Tstg
20
40.5
5
2
150
-55~150
W
mJ
A
mJ


Note:  Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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