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2SK4016

Features: • Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.)• High forward transfer admittance: |Yfs| = 10 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Sym...

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2SK4016: Features: • Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.)• High forward transfer admittance: |Yfs| = 10 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• E...

2SK4016 Data Sheet

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Part Number:
2SK4016
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Description



Features:

• Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
13
A
Pulse (t = 1 ms)
(Note 1)
IDP
52
Drain power dissipation (Tc=25)
PD
50
W
Single-pulse avalanche energy
(Note 3)
EAS
1033
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
5.0
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150



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