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2SK4015

Application• Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.)• High forward transfer admittance: |Yfs| = 7.4 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic ...

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SeekIC No. : 004226996 Detail

2SK4015: Application• Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.)• High forward transfer admittance: |Yfs| = 7.4 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)•...

2SK4015 Data Sheet

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Part Number:
2SK4015
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic
  
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
10
A
Pulse (Note 1)
IDP
40
Drain power dissipation (Tc = 25°C)
PD
45
W
Single-pulse avalanche energy(Note3)
EAS
363
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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