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2SK4013

Features: • Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 5.0 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 640 V)• Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic...

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2SK4013: Features: • Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 5.0 S (typ.)• Low leakage current: IDSS = 100 A (max) (VDS = 640 V)&#...

2SK4013 Data Sheet

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Part Number:
2SK4013
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 640 V)
• Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
800
V
Drain−gate voltage (RGS = 20 k)
VDGR
800
V
Gate−source voltage
VGSS
±30
V
Drain current DC(Note 1)
ID
6
A
Pulse (Note 1)
IDP
18
A
Drain power dissipation
PD
45
W
Single pulse avalanche energy (Note 2)
EAS
317
mJ
Avalanche current
IAR
6
A
Repetitive avalenche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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