2SK4012(Q)

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 13A
Drain to Source Voltage (Vdss): 500V
Mounting Type: Through Hole
Packaging: Bulk
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 45W
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V


Parameters:

Technical/Catalog Information	2SK4012(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	400 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	2-10U1B
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK4012 Q 2SK4012Q