2SJ75

The 2SJ75 is designed as one kind of TOSHIBA field effect transistor device that has five points of features:(1)recommended for first stages of EQ amplifiers and M.C. head amplifiers;(2)high Yfs= 22 mS (typ.);(3)low noise: En= 0.95 nV/Hz (typ.);(4)high input impedance: IGSS= 1.0 nA (max.) (VGS= 25 V);(5)complimentary to 2SK170.

The absolute maximum ratings of the 2SJ75 can be summarized as:(1)gate-drain voltage: 25 V;(2)gate current: -10 mA;(3)drain power dissipation: 400 mW;(4)junction temperature: 125 ;(5)storage temperature range: -55 to +125 .

The electrical characteristics of 2SJ75 can be summarized as:(1)gate cut-off current: 1.0 nA;(2)gate-drain breakdown voltage: 25 V;(3)drain current: -2.6 to -20 mA;(4)gate-source cut-off voltage: 0.15 to 2.0 V;(5)forward transfer admittance: 8 to 22 mS;(6)input capacitance: 32 pF. If you want to know more information such as the electrical characteristics about the 2SJ75, please download the datasheet in www.seekic.com or www.chinaicmart.com.