Application·Recommended for first stages of EQ amplifiers and M.C. head amplifiers. ·High |Yfs|: |Yfs| = 22 mS (typ.) (VDS= 10 V, VGS = 0, IDSS= 3 mA)·Low noise: En= 0.95 nV/Hz1/2 (typ.) (VDS=-10 V, ID =-1mA, f = 1 kHz)·High input impedance: IGSS= 1.0 nA (max) (VGS= 25 V)·Complimentary to 2SK170 S...
2SJ74: Application·Recommended for first stages of EQ amplifiers and M.C. head amplifiers. ·High |Yfs|: |Yfs| = 22 mS (typ.) (VDS= 10 V, VGS = 0, IDSS= 3 mA)·Low noise: En= 0.95 nV/Hz1/2 (typ.) (VDS=-10 V,...
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Characteristics |
Symbol |
Rating |
Unit |
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range |
VGDS IG PD Tj Tstg |
25 -10 400 125 -55~125 |
V mA mW |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).