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2SJ496

Features: ` Low on-resistance RDS(on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A)` 4V gate drive devices.` Large current capacitance ID = 5 ASpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 5 A Dra...

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2SJ496: Features: ` Low on-resistance RDS(on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A)` 4V gate drive devices.` Large current capacitance ID = 5 ASpecifications Item Symbol Ratings Unit Drain to s...

2SJ496 Data Sheet

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Part Number:
2SJ496
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Upload time: 2024/11/24

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Product Details

Description



Features:

`  Low on-resistance RDS(on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A)
`  4V gate drive devices.
`  Large current capacitance ID = 5 A


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 5 A
Drain peak current ID(pulse)*1 20 A
Drain peak current IDR 5 A
Avalanche current IAP *3 5 A
Avalanche energy EAR*3 2.14 mJ
Channel dissipation Pch*2 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C

Notes: 1. PW 10s, duty cycle 1 %
           2. Value at Ta = 25°C
           3. Value at Tch = 25°C, Rg 50



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