Position: Home  > All Categories> Integrated Circuits (ICs) > 2SJ401

2SJ401

Application4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS = −60 V)Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)Spe...

product image

2SJ401 Picture
See larger image
SeekIC No. : 004225155 Detail

2SJ401: Application4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)Low leakage current : IDSS = −100 A (max) (VDS = &...

2SJ401 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SJ401
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

 4-V gate drive
Low drain−source ON resistance : RDS (ON) = 33 m (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = −100 A (max) (VDS = −60 V)
Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−60
V
Drain?gate voltage (RGS = 20 k)
VDGR
−60
V
Gate?source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
−20
A
Pulse    (Note 1)
IDP
−80
Drain power dissipation (Tc = 25)
PD
100
W
Single pulse avalanche energy
                                           (Note 2)
EAS
800
mJ
Avalanche current
IAR
−20
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
Storage temperature range
TSTG
-55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Filters
PICO2205A
PICO2204A
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more