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2SJ493

Features: ` Super low on-state resistanceRDS(on)1 = 100 mW (MAX.) (VGS = 10 V, ID = 8 A)RDS(on)2 = 185 mW (MAX.) (VGS = 4 V, ID = 8 A)` Low Ciss: Ciss = 1210 pF (TYP.)` Built-in gate protection diodeSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS...

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2SJ493: Features: ` Super low on-state resistanceRDS(on)1 = 100 mW (MAX.) (VGS = 10 V, ID = 8 A)RDS(on)2 = 185 mW (MAX.) (VGS = 4 V, ID = 8 A)` Low Ciss: Ciss = 1210 pF (TYP.)` Built-in gate protection diod...

2SJ493 Data Sheet

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Part Number:
2SJ493
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

` Super low on-state resistance
RDS(on)1 = 100 mW (MAX.) (VGS = 10 V, ID = 8 A)
RDS(on)2 = 185 mW (MAX.) (VGS = 4 V, ID = 8 A)
` Low Ciss: Ciss = 1210 pF (TYP.)
` Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) ± 20 V
Gate to Source Voltage (VDS = 0 V) Note1 VGSS(DC) -20,0 V
Drain Current (DC) ID(DC) ±16 A
Drain Current (pulse) Note2 ID(pulse) ±64 A
Total Power Dissipation (TA = 25°C) PT 30 W
Total Power Dissipation (TC = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note3 IAS -16 A
Single Avalanche Energy Note3 EAS

25.6

 mJ


Notes 1. f = 20 kHz, Duty Cycle 10% (+Side)
2. PW 10 ms, Duty Cycle 1 %
3. Starting Tch = 25 °C, RA = 25, VGS = 20V0




Description

This 2SJ493 is P-Channel MOS Field Effect Transistor designed for high current switching applications.


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